Strain and band-edge alignment in single and multiple layers of self-assembled 
Ge/Si and GeSi/Si islands

Schmidt, O. G.; Eberl, K.; Rau, Y.

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Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands

Schmidt, O. G., Eberl, K., & Rau, Y. (2000). Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands. Physical Review B, 62, 16715-16720.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-E619-3 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-E61A-2

Genre: Journal Article

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Creators:
Schmidt, O. G.^{1, 2, 3, 4}, Author
Eberl, K.¹, Author
Rau, Y., Author

Affiliations:
1Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501
2Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499
3Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504
4Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481

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Dates: Date issued: 2000

Publication Status: Issued

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Identifiers: eDoc: 181847
Other: 27449

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Title: Physical Review B

Source Genre: Journal

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Pages: - Volume / Issue: 62 Sequence Number: - Start / End Page: 16715 - 16720 Identifier: -