Vacancy-related defects in ion implanted and electron irradiated silicon

Peaker, A. R.; Evans-Freeman, J. H.; Kan, P. Y. Y.; Hawkins, I. D.; Terry, J.; Jeynes, C.; Rubaldo, L.

Local TagsRelease HistoryDetailsSummary

Vacancy-related defects in ion implanted and electron irradiated silicon

Peaker, A. R., Evans-Freeman, J. H., Kan, P. Y. Y., Hawkins, I. D., Terry, J., Jeynes, C., et al. (2000). Vacancy-related defects in ion implanted and electron irradiated silicon. Materials Science and Engineering B, 71, 143-147.

Item is Released

show all hide all

Basic

show hide

Item Permalink: https://hdl.handle.net/21.11116/0000-000E-EC47-9 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-EC48-8

Genre: Journal Article

Files

show Files

Locators

show

Creators

show

hide

Creators:
Peaker, A. R., Author
Evans-Freeman, J. H., Author
Kan, P. Y. Y., Author
Hawkins, I. D., Author
Terry, J., Author
Jeynes, C., Author
Rubaldo, L.¹, Author

Affiliations:
1High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3371774

Content

show

Details

show

hide

Language(s):

Dates: Date issued: 2000

Publication Status: Issued

Pages: -

Publishing info: -

Table of Contents: -

Rev. Type: -

Identifiers: eDoc: 181722
Other: 27320

Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show

hide

Title: Materials Science and Engineering B

Source Genre: Journal

Creator(s):

Affiliations:

Publ. Info: -

Pages: - Volume / Issue: 71 Sequence Number: - Start / End Page: 143 - 147 Identifier: -