Formation and ordering effects of C-induced Ge dots grown on Si(100) by 
molecular beam epitaxy

Leifeld, O.; Beyer, A.; Müller, E.; Kern, K.; Grützmacher, D.

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Formation and ordering effects of C-induced Ge dots grown on Si(100) by molecular beam epitaxy

Leifeld, O., Beyer, A., Müller, E., Kern, K., & Grützmacher, D. (2000). Formation and ordering effects of C-induced Ge dots grown on Si(100) by molecular beam epitaxy. Materials Science and Engineering B, 74, 222-228.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-EB59-6 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-EB5A-5

Genre: Journal Article

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Leifeld, O.¹, Author
Beyer, A., Author
Müller, E., Author
Kern, K.¹, Author
Grützmacher, D., Author

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1Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481

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Dates: Date issued: 2000

Publication Status: Issued

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Identifiers: eDoc: 285476

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Title: Materials Science and Engineering B

Source Genre: Journal

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Pages: - Volume / Issue: 74 Sequence Number: - Start / End Page: 222 - 228 Identifier: -