Evidence for deep recombination centers in high-purity silicon from 
photoluminescence measurements at elevated temperatures.

Alex, V.; Weber, J.

Local TagsRelease HistoryDetailsSummary

Evidence for deep recombination centers in high-purity silicon from photoluminescence measurements at elevated temperatures.

Alex, V., & Weber, J. (1999). Evidence for deep recombination centers in high-purity silicon from photoluminescence measurements at elevated temperatures. Physica B, 273-274, 375-378.

Item is Released

show all hide all

Basic

show hide

Item Permalink: https://hdl.handle.net/21.11116/0000-000E-DFCA-4 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-DFCB-3

Genre: Journal Article

Files

show Files

Locators

show

Creators

show

hide

Creators:
Alex, V., Author
Weber, J.^{1, 2, 3, 4}, Author

Affiliations:
1Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481
2Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499
3Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370483
4Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504

Content

show

Details

show

hide

Language(s):

Dates: Date issued: 1999

Publication Status: Issued

Pages: -

Publishing info: -

Table of Contents: -

Rev. Type: -

Identifiers: eDoc: 181287
Other: 26875

Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show

hide

Title: Physica B

Source Genre: Journal

Creator(s):

Affiliations:

Publ. Info: -

Pages: - Volume / Issue: 273-274 Sequence Number: - Start / End Page: 375 - 378 Identifier: -