Impact ionization breakdown of n-GaAs in high magnetic fields.

Samuilov, V. A.; Ksenevich, V. K.; Reményi, G.; Kiss, G.; Podor, B.

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Impact ionization breakdown of n-GaAs in high magnetic fields.

Samuilov, V. A., Ksenevich, V. K., Reményi, G., Kiss, G., & Podor, B. (1999). Impact ionization breakdown of n-GaAs in high magnetic fields. Semiconductor Science and Technology, 14, 1084-1087.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-DD6A-3 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-DD6B-2

Genre: Journal Article

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Creators:
Samuilov, V. A., Author
Ksenevich, V. K., Author
Reményi, G.¹, Author
Kiss, G., Author
Podor, B., Author

Affiliations:
1High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3371774

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Dates: Date issued: 1999

Publication Status: Issued

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Identifiers: eDoc: 181830
Other: 27432

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Title: Semiconductor Science and Technology

Source Genre: Journal

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Pages: - Volume / Issue: 14 Sequence Number: - Start / End Page: 1084 - 1087 Identifier: -