Isotope effects on phonons and band gap in ZnSe.

Göbel, A.; Zhang, J. M.; Ruf, T.; Lauck, R.; Cardona, M.

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Isotope effects on phonons and band gap in ZnSe.

Göbel, A., Zhang, J. M., Ruf, T., Lauck, R., & Cardona, M. (1999). Isotope effects on phonons and band gap in ZnSe. In Proceedings of the 24th International Conference on Physics of Semiconductors. Singapore: World Scientific.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-DCCE-3 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-DCCF-2

Genre: Conference Paper

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Creators:
Göbel, A.¹, Author
Zhang, J. M., Author
Ruf, T.¹, Author
Lauck, R.², Author
Cardona, M.¹, Author

Affiliations:
1Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370502
2Scientific Facility Crystal Growth (Masahiko Isobe), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370496

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Dates: Date issued: 1999

Publication Status: Issued

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Identifiers: eDoc: 180710
Other: 15485

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Title: 24th International Conference on Physics of Semiconductors

Place of Event: Jerusalem, Israel

Start-/End Date: 1998-08-02 - 1998-08-07

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Title: Proceedings of the 24th International Conference on Physics of Semiconductors

Source Genre: Proceedings

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Publ. Info: Singapore : World Scientific

Pages: - Volume / Issue: - Sequence Number: CD only Start / End Page: - Identifier: -