Oscillations of 2D electron density in GaAs/Ga0.67Al0.33As heterostructures in 
the QHE regime.

Raymond, A.; Juillaguet, S.; Elmezouar, I.; Zawadzki, W.; Sadowski, M. L.; Kamal-Saadi, M.; Etienne, B.

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Oscillations of 2D electron density in GaAs/Ga_0.67Al_0.33As heterostructures in the QHE regime.

Raymond, A., Juillaguet, S., Elmezouar, I., Zawadzki, W., Sadowski, M. L., Kamal-Saadi, M., et al. (1999). Oscillations of 2D electron density in GaAs/Ga_0.67Al_0.33As heterostructures in the QHE regime. Semiconductor Science and Technology, 14, 915-920.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-D82C-E Version Permalink: https://hdl.handle.net/21.11116/0000-000E-D82D-D

Genre: Journal Article

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Creators:
Raymond, A., Author
Juillaguet, S., Author
Elmezouar, I., Author
Zawadzki, W., Author
Sadowski, M. L.¹, Author
Kamal-Saadi, M., Author
Etienne, B., Author

Affiliations:
1High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3371774

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Dates: Date issued: 1999

Publication Status: Issued

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Identifiers: eDoc: 181806
Other: 27407

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Title: Semiconductor Science and Technology

Source Genre: Journal

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Pages: - Volume / Issue: 14 Sequence Number: - Start / End Page: 915 - 920 Identifier: -