Pressure dependence of the band gap of 4H-SiC.

Zeman, J.; Engelbrecht, F.; Wellenhofer, G.; Peppermüller, C.; Helbig, R.; Martinez, G.; Rössler, U.

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Pressure dependence of the band gap of 4H-SiC.

Zeman, J., Engelbrecht, F., Wellenhofer, G., Peppermüller, C., Helbig, R., Martinez, G., et al. (1999). Pressure dependence of the band gap of 4H-SiC. physica status solidi (b), 211, 69-72.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-E079-D Version Permalink: https://hdl.handle.net/21.11116/0000-000E-E07A-C

Genre: Journal Article

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Creators:
Zeman, J.¹, Author
Engelbrecht, F., Author
Wellenhofer, G., Author
Peppermüller, C., Author
Helbig, R., Author
Martinez, G.¹, Author
Rössler, U., Author

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1High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3371774

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Dates: Date issued: 1999

Publication Status: Issued

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Identifiers: eDoc: 181243
Other: 16020

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Title: physica status solidi (b)

Source Genre: Journal

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Pages: - Volume / Issue: 211 Sequence Number: - Start / End Page: 69 - 72 Identifier: -