Tunnelling via an artificial impurity in a narrow quantum Hall conductor 
controlled by mesoscopic gates.

Liu, Z. H.; Nachtwei, G.; von Klitzing, K.; Eberl, K.

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Tunnelling via an artificial impurity in a narrow quantum Hall conductor controlled by mesoscopic gates.

Liu, Z. H., Nachtwei, G., von Klitzing, K., & Eberl, K. (1999). Tunnelling via an artificial impurity in a narrow quantum Hall conductor controlled by mesoscopic gates. Semiconductor Science and Technology, 14, 357-361.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-E107-C Version Permalink: https://hdl.handle.net/21.11116/0000-000E-E108-B

Genre: Journal Article

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Creators:
Liu, Z. H., Author
Nachtwei, G.¹, Author
von Klitzing, K.¹, Author
Eberl, K.², Author

Affiliations:
1Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504
2Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501

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Dates: Date issued: 1999

Publication Status: Issued

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Identifiers: eDoc: 180889
Other: 15665

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Title: Semiconductor Science and Technology

Source Genre: Journal

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Pages: - Volume / Issue: 14 Sequence Number: - Start / End Page: 357 - 361 Identifier: -