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  formation and optical properties of carbon-induced Ge dots.

Eberl, K., Schmidt, O. G., Schieker, S., Jin-Phillipp, N. Y., & Phillipp, F. (1998). formation and optical properties of carbon-induced Ge dots. Solid-State Electronics, 42, 1593-1597.

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 Creators:
Eberl, K.1, Author           
Schmidt, O. G.1, 2, 3, 4, Author           
Schieker, S., Author
Jin-Phillipp, N. Y.5, Author           
Phillipp, F.6, Author           
Affiliations:
1Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501              
2Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499              
3Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504              
4Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481              
5Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370483              
6Scientific Facility Stuttgart Center for Electron Microscopy (Peter A. van Aken), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370493              

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 Dates: 1998
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 182931
Other: 4345
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Title: Solid-State Electronics
Source Genre: Journal
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Pages: - Volume / Issue: 42 Sequence Number: - Start / End Page: 1593 - 1597 Identifier: -