Hole mobilities in pseudomorphic Si1-x-yGexCy alloy layers.

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Hole mobilities in pseudomorphic Si_1-x-yGe_xC_y alloy layers.

Duschl, R., Seeberger, H., & Eberl, K. (1998). Hole mobilities in pseudomorphic Si_1-x-yGe_xC_y alloy layers. Thin Solid Films, 336, 336-339.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-D5F2-0 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-D5F3-F

Genre: Journal Article

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Creators:
Duschl, R.¹, Author
Seeberger, H., Author
Eberl, K.¹, Author

Affiliations:
1Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501

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Dates: Date issued: 1998

Publication Status: Issued

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Identifiers: eDoc: 180653
Other: 15428

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Title: Thin Solid Films

Source Genre: Journal

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Pages: - Volume / Issue: 336 Sequence Number: - Start / End Page: 336 - 339 Identifier: -