Raman study of isotope effects on the phonon dispersion in SiC.

Gershoni, D.; Widulle, F.; Ruf, T.; Buresch, O.; Debernardi, A.; Cardona, M.

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Raman study of isotope effects on the phonon dispersion in SiC.

Widulle, F., Ruf, T., Buresch, O., Debernardi, A., & Cardona, M. (1998). Raman study of isotope effects on the phonon dispersion in SiC. Singapore: World Scientific.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-D7E4-E Version Permalink: https://hdl.handle.net/21.11116/0000-000E-D7E5-D

Genre: Other

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Creators:
Gershoni, D., Editor
Widulle, F.¹, Author
Ruf, T.², Author
Buresch, O.³, Author
Debernardi, A.², Author
Cardona, M.², Author

Affiliations:
1Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370480
2Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370502
3Abteilung Jansen, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370503

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Dates: Date issued: 1998

Publication Status: Issued

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Publishing info: Singapore : World Scientific

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Identifiers: eDoc: 181227
Other: 16004

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