Photoluminescence characterization of Te-doped GaSb layers grown by 
liquid-phase epitaxy from Bi melts.

Gladkov, P.; Monova, E.; Weber, J.

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Photoluminescence characterization of Te-doped GaSb layers grown by liquid-phase epitaxy from Bi melts.

Gladkov, P., Monova, E., & Weber, J. (1997). Photoluminescence characterization of Te-doped GaSb layers grown by liquid-phase epitaxy from Bi melts. Semiconductor Science and Technology, 12, 1409-1415.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-D894-7 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-D895-6

Genre: Journal Article

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Gladkov, P., Author
Monova, E., Author
Weber, J.^{1, 2, 3, 4}, Author

Affiliations:
1Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481
2Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499
3Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370483
4Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504

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Dates: Date issued: 1997

Publication Status: Issued

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Identifiers: eDoc: 182953
Other: 4373

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Title: Semiconductor Science and Technology

Source Genre: Journal

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Pages: - Volume / Issue: 12 Sequence Number: - Start / End Page: 1409 - 1415 Identifier: -