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  Step pinning and hillock formation in (Al,Ga)N films on native AlN substrates

Schulz, T., Yoo, S.-H., Lymperakis, L., Richter, C., Zatterin, E., Lachowski, A., et al. (2022). Step pinning and hillock formation in (Al,Ga)N films on native AlN substrates. Journal of Applied Physics, 132(22): 223102. doi:10.1063/5.0125480.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000B-FC1D-A Version Permalink: https://hdl.handle.net/21.11116/0000-000B-FC28-D
Genre: Journal Article

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 Creators:
Schulz, Tobias1, Author           
Yoo, Su-Hyun2, Author           
Lymperakis, Liverios3, Author           
Richter, C.1, Author
Zatterin, E.4, Author
Lachowski, A.1, Author
Hartmann, C.1, Author
Foronda, H. M.5, Author
Brandl, C.5, Author
Lugauer, H. J.5, Author
Hoffmann, Marc P.5, Author
Albrecht, Martin1, Author
Affiliations:
1Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany, ou_persistent22              
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              
3Leibniz Institut für Kristallzüchtung, Max-Born Str. 2, 12489 Berlin, Germany, ou_persistent22              
4The European Synchrotron Radiation Facility (ESRF), Grenoble, France, ou_persistent22              
5ams-OSRAM International GmbH, Leibnizstr. 4, 93055 Regensburg, Germany, ou_persistent22              

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Language(s): eng - English
 Dates: 2022-12-092022
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1063/5.0125480
 Degree: -

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Title: Journal of Applied Physics
  Abbreviation : J. Appl. Phys.
Source Genre: Journal
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Publ. Info: New York, NY : AIP Publishing
Pages: 8 Volume / Issue: 132 (22) Sequence Number: 223102 Start / End Page: - Identifier: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880