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  Efficient Spin-to-Charge Interconversion in Weyl Semimetal TaP at Room Temperature

Mendes, J. B. S., Vieira, A. S., Cunha, R. O., Ferreira, S. O., dos Reis, R. D., Schmidt, M., et al. (2022). Efficient Spin-to-Charge Interconversion in Weyl Semimetal TaP at Room Temperature. Advanced Materials Interfaces, 9(36): 2201716, pp. 1-8. doi:10.1002/admi.202201716.

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 Creators:
Mendes, Joaquim B. S.1, Author
Vieira, Andriele S.1, Author
Cunha, Rafael O.1, Author
Ferreira, Sukarno O.1, Author
dos Reis, Ricardo D.1, Author
Schmidt, Marcus2, Author           
Nicklas, Michael3, Author           
Rezende, Sergio M.1, Author
Azevedo, Antonio1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Marcus Schmidt, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863415              
3Michael Nicklas, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863472              

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 Abstract: In this paper, spin-to-charge current conversion properties in the Weyl semimetal TaP by means of the inverse Rashba-Edelstein effect (IREE) with the interfacial integration of this quantum material with the ferromagnetic metal Permalloy (Py = Ni81Fe19) are presented. The spin currents are generated in the Py layer by the spin pumping effect (SPE) from microwave-driven ferromagnetic resonance and are detected by a dc voltage along the TaP crystal, at room temperature. A field-symmetric voltage signal is observed without the contamination of asymmetrical lines due to spin rectification effects observed in studies using metallic ferromagnets. The observed voltage is attributed to spin-to-charge current conversion based on the IREE, made possible by the spin-orbit coupling induced intrinsically by the bulk band structure of Weyl semimetals. The measured IREE coefficient lambda(IREE) = (0.30 +/- 0.01) nm is two orders of magnitude larger than in graphene and is comparable to or larger than the values reported for some metallic interfaces and for several topological insulators.

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Language(s): eng - English
 Dates: 2022-12-052022-12-05
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: -
 Identifiers: ISI: 000896563800001
DOI: 10.1002/admi.202201716
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Title: Advanced Materials Interfaces
  Abbreviation : Adv. Mater. Interfaces
Source Genre: Journal
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Publ. Info: Weinheim : Wiley-VCH
Pages: - Volume / Issue: 9 (36) Sequence Number: 2201716 Start / End Page: 1 - 8 Identifier: ISSN: 2196-7350
CoNE: https://pure.mpg.de/cone/journals/resource/2196-7350