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  Topological doping of a three-dimensional Peierls system: Predicted structure of doped BaBiO3

Bischofs, I., Allen, P., Kostur, V., & Bhargava, R. (2002). Topological doping of a three-dimensional Peierls system: Predicted structure of doped BaBiO3. PHYSICAL REVIEW B, 66(17): 174108. doi:10.1103/PhysRevB.66.174108.

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Bischofs, IB1, 2, Author                 
Allen, PB3, Author
Kostur, VN3, Author
Bhargava, R3, Author
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1Department of Physics and Astronomy, State University of New York, Stony Brook, New York, USA, ou_persistent22              
2Theorie & Bio-Systeme, Max Planck Institute of Colloids and Interfaces, Max Planck Society, ou_1863289              
3external, ou_persistent22              

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 Abstract: At hole concentrations below x=0.4, Ba1-xKxBiO3 is nonmetallic. At x=0, pure BaBiO3 is a Peierls insulator. Very dilute holes create bipolaronic point defects in the Peierls order parameter. Here we find that the Rice-Sneddon version of Peierls theory predicts that more concentrated holes should form stacking faults (two-dimensional topological defects, called "slices") in the Peierls order parameter. However, the long-range Coulomb interaction, left out of the Rice-Sneddon model, destabilizes slices in favor of point bipolarons at low concentrations, leaving a window near 30% doping where the sliced state is marginally stable.

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 Dates: 2002
 Publication Status: Published online
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Title: PHYSICAL REVIEW B
Source Genre: Journal
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Pages: - Volume / Issue: 66 (17) Sequence Number: 174108 Start / End Page: - Identifier: ISSN: 2469-9950