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  Chemical passivation of 2D transition metal dichalcogenides: strategies, mechanisms, and prospects for optoelectronic applications

Li, Z., Bretscher, H., & Rao, A. (2024). Chemical passivation of 2D transition metal dichalcogenides: strategies, mechanisms, and prospects for optoelectronic applications. Nanoscale, 16(20), 9728-9741. doi:10.1039/D3NR06296A.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000C-93AF-9 Version Permalink: https://hdl.handle.net/21.11116/0000-000F-51CC-0
Genre: Journal Article

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https://arxiv.org/abs/2301.06925 (Preprint)
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https://doi.org/10.1039/D3NR06296A (Publisher version)
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 Creators:
Li, Z.1, Author
Bretscher, H.2, Author           
Rao, A.3, Author
Affiliations:
1Solid State Physics, Department of Materials Science and Engineering, Uppsala University, ou_persistent22              
2Ultrafast Transport in Quantum Materials, Condensed Matter Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_3185036              
3Cavendish Laboratory, University of Cambridge, ou_persistent22              

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 Abstract: The interest in obtaining high-quality monolayer transition metal dichalcogenides (TMDs) for optoelectronic device applications has been growing dramatically. However, the prevalence of defects and unwanted doping in these materials remain challenges, as they both limit optical properties and device performance. Surface chemical treatments of monolayer TMDs have been effective in improving their photoluminescence yield and charge transport properties. In this scenario, a systematic understanding of the underlying mechanism of chemical treatments will lead to a rational design of passivation strategies in future research, ultimately taking a step toward practical optoelectronic applications. We will therefore describe in this mini-review the strategies, progress, mechanisms, and prospects of chemical treatments to passivate and improve the optoelectronic properties of TMDs.

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Language(s): eng - English
 Dates: 2023-12-102024-04-192024-04-192024-04-28
 Publication Status: Issued
 Pages: 14
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: arXiv: 2301.06925
DOI: 10.1039/D3NR06296A
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Project name : A. R. is grateful for the invitation to this contribution from the editor office. We acknowledge funding from the Swedish Research Council, Vetenskapsrådet 2018-06610, and ÅForsk Foundation nr. 22-390.
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Title: Nanoscale
  Abbreviation : Nanoscale
Source Genre: Journal
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Publ. Info: Cambridge, UK : Royal Society of Chemistry
Pages: - Volume / Issue: 16 (20) Sequence Number: - Start / End Page: 9728 - 9741 Identifier: ISSN: 2040-3364
CoNE: https://pure.mpg.de/cone/journals/resource/2040-3364