A 67-116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT 
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Thome, Fabian; Schäfer, Frank; Türk, Sener; Yagoubov, Pavel; Leuther, Arnulf

doi:10.1109/LMWC.2021.3134462

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A 67-116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT Technology

Thome, F., Schäfer, F., Türk, S., Yagoubov, P., & Leuther, A. (2022). A 67-116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT Technology. IEEE Microwave and Wireless Components Letters, 32(5), 430-433. doi:10.1109/LMWC.2021.3134462.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000C-C90D-4 Version Permalink: https://hdl.handle.net/21.11116/0000-000C-C90E-3

Genre: Journal Article

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Thome, Fabian, Author
Schäfer, Frank¹, Author
Türk, Sener¹, Author
Yagoubov, Pavel, Author
Leuther, Arnulf, Author

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1Max Planck Institute for Radio Astronomy, Max Planck Society, ou_2205652

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Dates: Date issued: 2022-05

Publication Status: Issued

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Identifiers: DOI: 10.1109/LMWC.2021.3134462
BibTex Citekey: 2022IMWCL..32..430T

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Title: IEEE Microwave and Wireless Components Letters

Source Genre: Journal

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Pages: - Volume / Issue: 32 (5) Sequence Number: - Start / End Page: 430 - 433 Identifier: -