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  Correlation versus hybridization gap in CaMn2Bi2

Lane, C., Piva, M. M., Rosa, P. F. S., & Zhu, J.-X. (2023). Correlation versus hybridization gap in CaMn2Bi2. Scientific Reports, 13: 9271, pp. 1-8. doi:10.1038/s41598-023-35812-2.

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Lane, Christopher1, Author
Piva, M. M.2, Author           
Rosa, P. F. S.1, Author
Zhu, Jian-Xin1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863462              

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 Abstract: We study the interplay between electronic correlations and hybridization in the low-energy electronic structure of CaMn 2 Bi 2 , a candidate hybridization-gap semiconductor. By employing a DFT+U approach we find both the antiferromagnetic Néel order and band gap in good agreement with the corresponding experimental values. Under hydrostatic pressure, we find a crossover from hybridization gap to charge-transfer insulting physics due to the delicate balance of hybridization and correlations. Increasing the pressure above Pc= 4 GPa we find a simultaneous pressure-induced volume collapse, plane-to-chain, insulator to metal transition. Finally, we have also analyzed the topology in the antiferromagnetic CaMn 2 Bi 2 for all pressures studied. © 2023, The Author(s).

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Language(s): eng - English
 Dates: 2023-06-072023-06-07
 Publication Status: Issued
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 Rev. Type: -
 Identifiers: DOI: 10.1038/s41598-023-35812-2
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Title: Scientific Reports
  Abbreviation : Sci. Rep.
Source Genre: Journal
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Publ. Info: London, UK : Nature Publishing Group
Pages: - Volume / Issue: 13 Sequence Number: 9271 Start / End Page: 1 - 8 Identifier: ISSN: 2045-2322
CoNE: https://pure.mpg.de/cone/journals/resource/2045-2322