Influence of Free Layer Surface Roughness on Magnetic and Electrical Properties 
of 300 mm CMOS-compatible MTJ Stacks

Durner, Christoph; Lederer, Maximilian; Gurieva, Tatiana; Hertel, Johannes; Hindenberg, Meike; Gerlich, Lukas; Wagner-Reetz, Maik; Parkin, Stuart

doi:10.1109/TMAG.2023.3287134

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Influence of Free Layer Surface Roughness on Magnetic and Electrical Properties of 300 mm CMOS-compatible MTJ Stacks

Durner, C., Lederer, M., Gurieva, T., Hertel, J., Hindenberg, M., Gerlich, L., et al. (2023). Influence of Free Layer Surface Roughness on Magnetic and Electrical Properties of 300 mm CMOS-compatible MTJ Stacks. IEEE Transactions on Magnetics. doi:10.1109/TMAG.2023.3287134.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000D-8CA8-8 Version Permalink: https://hdl.handle.net/21.11116/0000-000D-8CA9-7

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Creators:
Durner, Christoph¹, Author
Lederer, Maximilian², Author
Gurieva, Tatiana², Author
Hertel, Johannes², Author
Hindenberg, Meike², Author
Gerlich, Lukas², Author
Wagner-Reetz, Maik², Author
Parkin, Stuart¹, Author

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1Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3287476
2External Organizations, ou_persistent22

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Abstract: The magnetic tunnel junction (MTJ) is a highly versatile device widely used in today’s spintronic applications such as magnetoresistive random-access memory (MRAM), magnetic sensors and prospectively as a read device in racetrack memory. Tuning the perpendicular (p-)MTJ stack to match the desired properties, such as tunnel magnetoresistance (TMR), magnetic anisotropies or coercive field of the free layer, requires careful optimization of the deposition parameters as well as precise layer thickness control. Here, the deposition of individual layers in a wedged manner across 300 mm wafers is proposed to engineer the thicknesses within the stack more efficiently. Furthermore, this technique provides detailed insights into effects related to surface roughness, magnetic anisotropy and TMR.

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Dates: Published Online: 2023-06-16

Publication Status: Published online

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Identifiers: DOI: 10.1109/TMAG.2023.3287134

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Title: IEEE Transactions on Magnetics

Abbreviation : IEEE Trans. Magn.

Source Genre: Journal

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Publ. Info: New York, NY : Published by the Institute of Electrical and Electronics Engineers for the Magnetics Group

Pages: - Volume / Issue: - Sequence Number: - Start / End Page: - Identifier: ISSN: 0018-9464
CoNE: https://pure.mpg.de/cone/journals/resource/954925405681