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  Determining the Number of Graphene Nanoribbons in Dual-Gate Field-Effect Transistors

Zhang, J., Barin, G. B., Furrer, R., Du, C.-Z., Wang, X.-Y., Müllen, K., et al. (2023). Determining the Number of Graphene Nanoribbons in Dual-Gate Field-Effect Transistors. Nano Letters, 23(18), 8474-8480. doi:10.1021/acs.nanolett.3c01931.

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 Creators:
Zhang, Jian, Author
Barin, Gabriela Borin, Author
Furrer, Roman, Author
Du, Cheng-Zhuo, Author
Wang, Xiao-Ye, Author
Müllen, Klaus1, Author           
Ruffieux, Pascal, Author
Fasel, Roman, Author
Calame, Michel, Author
Perrin, Mickael L., Author
Affiliations:
1Dept. Müllen: Synthetic Chemistry, MPI for Polymer Research, Max Planck Society, ou_1800289              

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Language(s): eng - English
 Dates: 2023-09-062023
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1021/acs.nanolett.3c01931
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Title: Nano Letters
  Abbreviation : Nano Lett.
Source Genre: Journal
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Publ. Info: Washington, DC : American Chemical Society
Pages: - Volume / Issue: 23 (18) Sequence Number: - Start / End Page: 8474 - 8480 Identifier: ISSN: 1530-6984
CoNE: https://pure.mpg.de/cone/journals/resource/110978984570403