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neutron X-ray reflectometry; copper oxidation; ion implantation
Abstract:
Combination of neutron and X-ray reflectometry was used to study the depth profile of 100 nm thin copper films with implanted oxygen ions with energy E = 10-30 keV and fluencies D = (0.2-5.4) x10(16) cm(-2). The oxygen ion implantation at 30 keV was shown to lead to formation of 3 nm thick layer on the surface. Density and copper-oxygen stoichiometry of the observed surface layer was close to Cu2O oxide. We attribute the Cu2O oxide formation to highly mobilized copper atoms generated by stimulated ion implantation.