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  Formation of Thin Oxide Layer on Surface of Copper Caused by Implantation of High-Energy Oxygen Ions

Khaydukov, Y. N., Soltwedel, O., Marchenko, Y. A., Khaidukova, D. Y., Csik, A., Acartürk, T., et al. (2017). Formation of Thin Oxide Layer on Surface of Copper Caused by Implantation of High-Energy Oxygen Ions. Journal of Surface Investigation, 11(1), 206-210.

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 Creators:
Khaydukov, Y. N., Author
Soltwedel, O., Author
Marchenko, Y. A., Author
Khaidukova, D. Y., Author
Csik, A., Author
Acartürk, T.1, Author           
Starke, U.1, Author           
Keller, T.2, Author           
Guglya, A. G., Author
Kazdayev, K. R., Author
Affiliations:
1Scientific Facility Interface Analysis (Ulrich Starke), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370498              
2Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370480              

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Free keywords: neutron X-ray reflectometry; copper oxidation; ion implantation
 Abstract: Combination of neutron and X-ray reflectometry was used to study the depth profile of 100 nm thin copper films with implanted oxygen ions with energy E = 10-30 keV and fluencies D = (0.2-5.4) x10(16) cm(-2). The oxygen ion implantation at 30 keV was shown to lead to formation of 3 nm thick layer on the surface. Density and copper-oxygen stoichiometry of the observed surface layer was close to Cu2O oxide. We attribute the Cu2O oxide formation to highly mobilized copper atoms generated by stimulated ion implantation.

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Language(s): eng - English
 Dates: 2017
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 734821
ISI: 000396389600033
 Degree: -

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Title: Journal of Surface Investigation
Source Genre: Journal
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Publ. Info: NEW YORK : MAIK NAUKA/INTERPERIODICA/SPRINGER
Pages: - Volume / Issue: 11 (1) Sequence Number: - Start / End Page: 206 - 210 Identifier: ISSN: 1027-4510