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  Influence of the growth conditions on the optical and structural properties of self-assembled InAs/GaAs quantum dots for low As/In ratio

Ozdemir, S., Suyolcu, Y., Turan, S., & Aslan, B. (2017). Influence of the growth conditions on the optical and structural properties of self-assembled InAs/GaAs quantum dots for low As/In ratio. Applied Surface Science, 392, 817-825.

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 Creators:
Ozdemir, S., Author
Suyolcu, Y.1, Author
Turan, S., Author
Aslan, B., Author
Affiliations:
1Max Planck Society, ou_persistent13              

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Free keywords: Quantum dot; Self-assembled; Molecular beam epitaxy; Photoluminescence
 Abstract: We report on the growth and characterization of self-assembled InAs/GaAs quantum dots (QDs). The influence of the systematically changed growth conditions on the opto-electronic and structural properties of the QDs were investigated. Combination of the amount of the deposited InAs, growth temperature and growth rate were optimized for low As/In flux ratio to obtain well-resolved ground and excited states in the low temperature photoluminescence (PL) spectra. SEM and TEM techniques were also used for the characterization of QDs. The results were evaluated simply through the conservation of mass approximation and the x-ray diffraction measurements with fitted curves. The extracted InAs and wetting layer thicknesses were brought out that the XRD analysis reflects the overall tendency of the QD density change and WL behaviors in response to the changes in growth conditions. (C) 2016 Published by Elsevier B.V.

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Language(s): eng - English
 Dates: 2017
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 735127
ISI: 000389088300091
 Degree: -

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Title: Applied Surface Science
Source Genre: Journal
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Publ. Info: AMSTERDAM : ELSEVIER SCIENCE BV
Pages: - Volume / Issue: 392 Sequence Number: - Start / End Page: 817 - 825 Identifier: ISSN: 0169-4332