English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
 
 
DownloadE-Mail
  Raman Characterization of the Charge Density Wave Phase of 1T-TiSe2: From Bulk to Atomically Thin Layers

Duong, D., Ryu, G., Hoyer, A., Lin, C. T., Burghard, M., & Kern, K. (2017). Raman Characterization of the Charge Density Wave Phase of 1T-TiSe2: From Bulk to Atomically Thin Layers. ACS Nano, 11(1), 1034-1040.

Item is

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Duong, D., Author
Ryu, G., Author
Hoyer, A., Author
Lin, C. T.1, Author           
Burghard, M.2, Author           
Kern, K.2, Author           
Affiliations:
1Scientific Facility Crystal Growth (Masahiko Isobe), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370496              
2Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481              

Content

show
hide
Free keywords: 2D transition metal dichalcogenides; 1T-TiSe2; charge density wave transition; low-frequency Raman modes; shearing mode
 Abstract: Raman scattering is a powerful tool for investigating the vibrational properties of two-dimensional materials. Unlike the 2H phase of many transition metal dichalcogenides, the 1T phase of TiSe2 features a Raman-active shearing and breathing mode, both of which shift toward lower energy with increasing number of layers. By systematically studying the Raman signal of 1T-TiSe2 in dependence of the sheet thickness, we demonstrate that the charge density wave transition of this compound can be reliably determined from the temperature dependence of the peak position of the Eg mode near 136 cm(-1). The phase transition temperature is found to first increase with decreasing thickness of the sheets, followed by a decrease due to the effect of surface oxidation. The Raman spectroscopy-based method is expected to be applicable also to other 1T-phase transition metal dichalcogenides featuring a charge density wave transition and represents a valuable complement to electrical transport-based approaches.

Details

show
hide
Language(s): eng - English
 Dates: 2017
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 734812
ISI: 000392886500109
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: ACS Nano
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: WASHINGTON : AMER CHEMICAL SOC
Pages: - Volume / Issue: 11 (1) Sequence Number: - Start / End Page: 1034 - 1040 Identifier: ISSN: 1936-0851