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  Electron scattering times in ZnO based polar heterostructures

Falson, J., Kozuka, Y., Smet, J. H., Arima, T., Tsukazaki, A., & Kawasaki, M. (2015). Electron scattering times in ZnO based polar heterostructures. Applied Physics Letters, 107(8): 082102.

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 Creators:
Falson, J., Author
Kozuka, Y., Author
Smet, J. H.1, 2, Author           
Arima, T., Author
Tsukazaki, A., Author
Kawasaki, M., Author
Affiliations:
1Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504              
2Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370489              

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 Abstract: The remarkable historic advances experienced in condensed matter physics have been enabled through the continued exploration and proliferation of increasingly richer and cleaner material systems. In this work, we report on the scattering times of charge carriers confined in state-of-theart MgZnO/ZnO heterostructures displaying electron mobilities in excess of 10(6) cm(2)/V s. Through an examination of low field quantum oscillations, we obtain the effective mass of charge carriers, along with the transport and quantum scattering times. These times compare favorably with high mobility AlGaAs/GaAs heterostructures, suggesting the quality of MgZnO/ZnO heterostructures now rivals that of traditional semiconductors. (C) 2015 AIP Publishing LLC.

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Language(s): eng - English
 Dates: 2015
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: Internal
 Identifiers: eDoc: 713727
ISI: 000360593900030
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Title: Applied Physics Letters
Source Genre: Journal
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Pages: - Volume / Issue: 107 (8) Sequence Number: 082102 Start / End Page: - Identifier: ISSN: 0003-6951