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  Thin-layer black phosphorus/GaAs heterojunction p-n diodes (vol 106, 233110, 2015)

Gehring, P., Urcuyo, R., Duong, D., Burghard, M., & Kern, K. (2015). Thin-layer black phosphorus/GaAs heterojunction p-n diodes (vol 106, 233110, 2015). Applied Physics Letters, 107(13): 139902.

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 Creators:
Gehring, P., Author
Urcuyo, R., Author
Duong, D., Author
Burghard, M.1, Author           
Kern, K.1, Author           
Affiliations:
1Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481              

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Language(s): eng - English
 Dates: 2015
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Internal
 Identifiers: eDoc: 713751
ISI: 000362575600057
 Degree: -

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Title: Applied Physics Letters
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 107 (13) Sequence Number: 139902 Start / End Page: - Identifier: ISSN: 0003-6951