Inline electron holography and VEELS for the measurement of strain in ternary 
and quaternary (In,Al,Ga)N alloyed thin films and its effect on bandgap energy

Mánuel, J. M.; Koch, C. T.; Özdöl, V. B.; Sigle, W.; van Aken, P. A.; García, R.; Morales, F. M.

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Inline electron holography and VEELS for the measurement of strain in ternary and quaternary (In,Al,Ga)N alloyed thin films and its effect on bandgap energy

Mánuel, J. M., Koch, C. T., Özdöl, V. B., Sigle, W., van Aken, P. A., García, R., et al. (2015). Inline electron holography and VEELS for the measurement of strain in ternary and quaternary (In,Al,Ga)N alloyed thin films and its effect on bandgap energy. Journal of Microscopy, 261, 27-35.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-CB50-3 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-CB51-2

Genre: Journal Article

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Creators:
Mánuel, J. M., Author
Koch, C. T., Author
Özdöl, V. B., Author
Sigle, W.¹, Author
van Aken, P. A.¹, Author
García, R., Author
Morales, F. M., Author

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1Scientific Facility Stuttgart Center for Electron Microscopy (Peter A. van Aken), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370493

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Language(s): eng - English

Dates: Date issued: 2015

Publication Status: Issued

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Rev. Type: Internal

Identifiers: eDoc: 724729

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Title: Journal of Microscopy

Source Genre: Journal

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Pages: - Volume / Issue: 261 Sequence Number: - Start / End Page: 27 - 35 Identifier: -