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  Enhancing the spin properties of shallow implanted nitrogen vacancy centers in diamond by epitaxial overgrowth

Staudacher, T., Ziem, F., Häussler, L., Stöhr, R., Steinert, S., Reinhard, F., et al. (2012). Enhancing the spin properties of shallow implanted nitrogen vacancy centers in diamond by epitaxial overgrowth. Applied Physics Letters, 101(21): 212401.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-C29A-9 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-C29B-8
Genre: Journal Article

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Staudacher, T.1, Author
Ziem, F., Author
Häussler, L., Author
Stöhr, R., Author
Steinert, S., Author
Reinhard, F., Author
Scharpf, J., Author
Denisenko, A., Author
Wrachtrup, J., Author
Affiliations:
1Max Planck Society, ou_persistent13              

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 Abstract: Scaling of diamond defect center based quantum registers relies on the ability to position nitrogen vacancy (NV) centers with high spatial resolution. Using ion implantation, shallow (<10 nm) NVs can be placed with accuracy below 20 nm, but generally show reduced spin properties compared to bulk NVs. We demonstrate the enhancement of spin properties for shallow implanted NVs using a diamond overgrowth technique. An increase of coherence times up to an order of magnitude (T-2=250 mu s) was achieved, ms decoherence times were realized using dynamical decoupling. This marks a further step towards achieving strong coupling among defects positioned with nm precision. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767144]

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Language(s): eng - English
 Dates: 2012
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 632913
ISI: 000311477600045
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Title: Applied Physics Letters
Source Genre: Journal
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Pages: - Volume / Issue: 101 (21) Sequence Number: 212401 Start / End Page: - Identifier: ISSN: 0003-6951