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  Influence of the atomic-scale structure on the exciton fine-structure splitting in InGaAs and GaAs quantum dots in a vertical electric field

Luo, J. W., Singh, R., Zunger, A., & Bester, G. (2012). Influence of the atomic-scale structure on the exciton fine-structure splitting in InGaAs and GaAs quantum dots in a vertical electric field. Physical Review B, 86(16): 161302.

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Luo, J. W., Author
Singh, R.1, 2, Author           
Zunger, A., Author
Bester, G.3, Author
Affiliations:
1Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481              
2Former Research Groups, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370500              
3Max Planck Society, ou_persistent13              

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 Abstract: We investigate the vertical electric field tuning of the exciton fine-structure splitting (FSS) in several InGaAs and GaAs quantum dots (QDs) using the atomistic empirical pseudopotential approach and configuration interaction. We find that the FSS is surprisingly tunable, with a rate similar to the one reported for lateral electric fields. The minimum FSS for GaAs QDs often lies below the radiative linewidth, which makes them good candidates for the generation of entangled photon pairs. We highlight, however, that random alloy fluctuations affect the minimum FSS by +/- 1.4 mu eV, so that a postselection of QDs may still be beneficial to obtain entangled photon pairs with the highest fidelity. We suggest a simple experimental procedure for this task. The FSS is therefore a rare observable, where the specific decoration of the random alloy lattice matters significantly.

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Language(s): eng - English
 Dates: 2012
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 632937
ISI: 000309655000002
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Title: Physical Review B
Source Genre: Journal
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Pages: - Volume / Issue: 86 (16) Sequence Number: 161302 Start / End Page: - Identifier: ISSN: 1098-0121