Single Crystal Growth and Transport Properties of Cu-doped Topological 
Insulator Bi2Se3

Li, Z. J.; Liu, Y.; White, S. C.; Wahl, P.; Xie, X. M.; Jiang, M. H.; Lin, C. T.

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Single Crystal Growth and Transport Properties of Cu-doped Topological Insulator Bi₂Se₃

Li, Z. J., Liu, Y., White, S. C., Wahl, P., Xie, X. M., Jiang, M. H., et al. (2012). Single Crystal Growth and Transport Properties of Cu-doped Topological Insulator Bi₂Se₃. Physics Procedia, 36, 638-643.

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Datensatz-Permalink: https://hdl.handle.net/21.11116/0000-000E-C1C1-D Versions-Permalink: https://hdl.handle.net/21.11116/0000-000E-C1C2-C

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Urheber:
Li, Z. J., Autor
Liu, Y., Autor
White, S. C., Autor
Wahl, P.^{1, 2}, Autor
Xie, X. M., Autor
Jiang, M. H., Autor
Lin, C. T.³, Autor

Affiliations:
1Former Research Groups, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370500
2Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481
3Scientific Facility Crystal Growth (Masahiko Isobe), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370496