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Abstract:
The anisotropy of the electron g factor is investigated in symmetrically (SQW) and asymmetrically (AQW) doped 20-nm GaAs/AlGaAs quantum wells, grown in the [001] direction. Applied was the electrically detected electron spin resonance technique. The AQW demonstrates strong twofold in-plane g-factor anisotropy with the [110] and [1 (1) over bar0] principal axes. This can be readily ascribed to the internal electric field asymmetry as caused by single-side doping. The SQW is shown to have 10 times as weak (but still detectable) anisotropy with the same principal axes. The linear (in the magnetic field) corrections to the g factor were also carefully measured. The a tensor of these corrections is shown to have at least three different nonzero components, namely, a(zzz), a(xxz), and a(yyz)
