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  Long-Range Ordered Single-Crystal Graphene on High-Quality Heteroepitaxial Ni Thin Films Grown on MgO(111)

Iwasaki, T., Park, H. J., Konuma, M., Lee, D. S., Smet, J. H., & Starke, U. (2011). Long-Range Ordered Single-Crystal Graphene on High-Quality Heteroepitaxial Ni Thin Films Grown on MgO(111). Nano Letters, 11(1), 79-84.

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 Creators:
Iwasaki, T., Author
Park, H. J., Author
Konuma, M.1, 2, Author           
Lee, D. S.3, 4, Author           
Smet, J. H.3, 4, Author           
Starke, U.2, Author           
Affiliations:
1Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481              
2Scientific Facility Interface Analysis (Ulrich Starke), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370498              
3Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504              
4Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370489              

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Free keywords: Graphene; single crystal; large area; monolayer; heteroepitaxial growth
 Abstract: Large-area single crystal monolayer graphene is synthesized on Ni(111) thin films, which have flat terraces and no grain boundaries. The flat single-crystal Ni films are heteroepitaxially grown on MgO(111) substrates using a buffer layer technique. Low-energy electron diffraction and various spectroscopic methods reveal the long-range single crystallinity and uniform monolayer thickness of the graphene. when transferred onto an insulating wafer, continuous millimeter-scale single domain graphene is obtained.

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Language(s): eng - English
 Dates: 2011
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 581394
ISI: 000286029400013
 Degree: -

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Title: Nano Letters
Source Genre: Journal
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Publ. Info: WASHINGTON : AMER CHEMICAL SOC
Pages: - Volume / Issue: 11 (1) Sequence Number: - Start / End Page: 79 - 84 Identifier: ISSN: 1530-6984