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  Printed array of thin-dielectric metal-oxide-metal (MOM) tunneling diodes

Bareiß, M., Hochmeister, A., Jegert, G., Zschieschang, U., Klauk, H., Huber, R., et al. (2011). Printed array of thin-dielectric metal-oxide-metal (MOM) tunneling diodes. Journal of Applied Physics, 110(4): 044316.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-BDFD-1 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-BDFE-0
Genre: Journal Article

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 Creators:
Bareiß, M., Author
Hochmeister, A., Author
Jegert, G., Author
Zschieschang, U.1, Author           
Klauk, H.1, Author           
Huber, R., Author
Grundler, D., Author
Porod, W., Author
Fabel, B., Author
Scarpa, G., Author
Lugli, P., Author
Affiliations:
1Research Group Organic Electronics (Hagen Klauk), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370488              

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 Abstract: A large area array of metal-oxide-metal (MOM) tunneling diodes with an ultrathin dielectric (similar to 3.6 nm aluminum oxide) have been fabricated via a transfer-printing process. The MOM diodes exhibit an excellent tunneling behavior that is suitable for rectifying high-frequency ac current into direct current (dc). Direct tunneling and Fowler-Nordheim tunneling have been observed over eight orders of magnitude in current density. The ratio between forward and reverse current is as large as two orders of magnitude. Simulations have been carried out to extract the static device parameters and have confirmed the existence of a dipole layer at the aluminum/aluminum oxide interface of the printed tunneling diodes. Capacitance measurements have shown that the permittivity of the ultrathin aluminum oxide film is smaller than that of bulk aluminum oxide. The mechanical yield of the transfer-printing process is better than 80%, confirming that transfer printing is a promising candidate for the efficient fabrication of quantum devices over large areas. (C) 2011 American Institute of Physics. [doi:10.1063/1.3615952]

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Language(s): eng - English
 Dates: 2011
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 581156
ISI: 000294484300143
 Degree: -

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Title: Journal of Applied Physics
  Alternative Title : J. Appl. Phys.
Source Genre: Journal
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Publ. Info: MELVILLE : AMER INST PHYSICS
Pages: - Volume / Issue: 110 (4) Sequence Number: 044316 Start / End Page: - Identifier: ISSN: 0021-8979