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  Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001)

Boioli, F., Zinovyev, V. A., Gatti, R., Marzegalli, A., Montalenti, F., Stoffel, M., et al. (2011). Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001). Journal of Applied Physics, 110(4): 044310.

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Datensatz-Permalink: https://hdl.handle.net/21.11116/0000-000E-BED3-E Versions-Permalink: https://hdl.handle.net/21.11116/0000-000E-BED4-D
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 Urheber:
Boioli, F., Autor
Zinovyev, V. A., Autor
Gatti, R., Autor
Marzegalli, A., Autor
Montalenti, F., Autor
Stoffel, M.1, Autor           
Merdzhanova, T.2, Autor           
Wang, L.3, Autor           
Pezzoli, F., Autor
Rastelli, A.1, 2, Autor           
Schmidt, O. G.1, 2, 4, 5, Autor           
Miglio, L., Autor
Affiliations:
1Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481              
2Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501              
3Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370480              
4Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499              
5Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504              

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 Zusammenfassung: Ordering of misfit dislocation segments in concentric polygons at the base of SiGe epitaxial islands on Si(001) has been recently indicated by in situ Transmission Electron Microscope observation. In this paper we confirm the very regular spacing by Atomic Force Microscope and He-ion Microscope measurements of the footprint carved in the Si substrate by the plastic events. We explain the intriguing ordering, as obtained with no gliding rearrangements, by cyclic occurrence of the thermodynamic critical conditions for plastic events. Quantitative predictions by a fully analytical model, which includes the dependence on island shape and composition in the generation of misfit dislocations, matched very well experimental measurements. (C) 2011 American Institute of Physics. [doi:10.1063/1.3611385]

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Sprache(n): eng - English
 Datum: 2011
 Publikationsstatus: Erschienen
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: eDoc: 581157
ISI: 000294484300137
 Art des Abschluß: -

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Titel: Journal of Applied Physics
  Alternativer Titel : J. Appl. Phys.
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: MELVILLE : AMER INST PHYSICS
Seiten: - Band / Heft: 110 (4) Artikelnummer: 044310 Start- / Endseite: - Identifikator: ISSN: 0021-8979