Effect of pressure on the second-order Raman scattering intensities of 
zincblende semiconductors

Trallero-Giner, C.; Syassen, K.

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Effect of pressure on the second-order Raman scattering intensities of zincblende semiconductors

Trallero-Giner, C., & Syassen, K. (2010). Effect of pressure on the second-order Raman scattering intensities of zincblende semiconductors. physica status solidi (b), 247(1), 182-188.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-BFC7-B Version Permalink: https://hdl.handle.net/21.11116/0000-000E-BFC8-A

Genre: Journal Article

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Creators:
Trallero-Giner, C.¹, Author
Syassen, K.^{1, 2}, Author

Affiliations:
1Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501
2Department Solid State Quantum Electronics (Jochen Mannhart), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370485

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Language(s): eng - English

Dates: Date issued: 2010

Publication Status: Issued

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Identifiers: eDoc: 479285
ISI: 000274102800025

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Title: physica status solidi (b)

Source Genre: Journal

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Pages: - Volume / Issue: 247 (1) Sequence Number: - Start / End Page: 182 - 188 Identifier: ISSN: 0370-1972