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  Stoichiometry in Thin Film Oxides – A Foreword

Maier, J. (2010). Stoichiometry in Thin Film Oxides – A Foreword. In Thin Film Metal-Oxides (pp. v-ix). New York: Springer US.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-BC68-A Version Permalink: https://hdl.handle.net/21.11116/0000-000E-BC69-9
Genre: Book Chapter

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 Creators:
Maier, J.1, Author           
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1Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370483              

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 Abstract: In: Thin Film Metal-Oxides. Fundamentals and Applications in Electronics and Energy, S. Ramanathan (Ed.) Springer US, New York, 2010, pages v–ix

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Language(s): deu - German
 Dates: 2010
 Publication Status: Issued
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 Identifiers: eDoc: 490975
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Title: Thin Film Metal-Oxides
Source Genre: Book
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Publ. Info: New York : Springer US
Pages: - Volume / Issue: - Sequence Number: - Start / End Page: v - ix Identifier: -

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Title: Fundamentals and Applications in Electronics and Energy
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