Hysteresis Effects by Source/Drain Interdigitated-Finger Geometry in 
6,13-Bis(triisopropylsilylethynyl)pentacene Thin-Film Transistors

Kwon, J. H.; Shin, S. I.; Choi, J.; Chung, M. H.; Ryu, H.; Zschieschang, U.; Klauk, H.; Anthony, J. E.; Ju, B. K.

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Hysteresis Effects by Source/Drain Interdigitated-Finger Geometry in 6,13-Bis(triisopropylsilylethynyl)pentacene Thin-Film Transistors

Kwon, J. H., Shin, S. I., Choi, J., Chung, M. H., Ryu, H., Zschieschang, U., et al. (2009). Hysteresis Effects by Source/Drain Interdigitated-Finger Geometry in 6,13-Bis(triisopropylsilylethynyl)pentacene Thin-Film Transistors. Electrochemical and Solid-State Letters, 12(8), H285-H287.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-BBB9-F Version Permalink: https://hdl.handle.net/21.11116/0000-000E-BBBA-E

Genre: Journal Article

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Creators:
Kwon, J. H., Author
Shin, S. I., Author
Choi, J., Author
Chung, M. H., Author
Ryu, H., Author
Zschieschang, U.¹, Author
Klauk, H.¹, Author
Anthony, J. E., Author
Ju, B. K., Author

Affiliations:
1Research Group Organic Electronics (Hagen Klauk), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370488

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Language(s): eng - English

Dates: Date issued: 2009

Publication Status: Issued

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Identifiers: eDoc: 450323
ISI: 000266975000015

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Title: Electrochemical and Solid-State Letters

Source Genre: Journal

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Pages: - Volume / Issue: 12 (8) Sequence Number: - Start / End Page: H285 - H287 Identifier: ISSN: 1099-0062