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  Doped Mott insulator as the origin of heavy-fermion behavior in LiV2O4

Arita, R., Held, K., Lukoyanov, A. V., & Anisimov, V. I. (2007). Doped Mott insulator as the origin of heavy-fermion behavior in LiV2O4. Physical Review Letters, 98(16): 166402.

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Arita, R.1, Author           
Held, K.1, Author           
Lukoyanov, A. V., Author
Anisimov, V. I., Author
Affiliations:
1Department Quantum Many-Body Theory (Walter Metzner), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370486              

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 Abstract: We investigate the electronic structure of LiV2O4, for which heavy-fermion behavior has been observed in various experiments, by the combination of the local density approximation and dynamical mean field theory. To obtain results at zero temperature, we employ the projective quantum Monte Carlo method as an impurity solver. Our results show that the strongly correlated a(1g) band is a lightly doped Mott insulator which, at low temperatures, shows a sharp (heavy) quasiparticle peak just above the Fermi level, which is consistent with recent photoemission experiments by Shimoyamada et al. [Phys. Rev. Lett. 96, 026403 (2006)].

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Language(s): eng - English
 Dates: 2007
 Publication Status: Issued
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 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 338773
ISI: 000245871200044
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Title: Physical Review Letters
Source Genre: Journal
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Pages: - Volume / Issue: 98 (16) Sequence Number: 166402 Start / End Page: - Identifier: ISSN: 0031-9007