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  Shape oscillations: A walk through the phase diagram of strained islands

Stoffel, M., Rastelli, A., Stangl, J., Merdzhanova, T., Bauer, G., & Schmidt, O. G. (2007). Shape oscillations: A walk through the phase diagram of strained islands. Physical Review B, 75(11): 113307.

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 Creators:
Stoffel, M.1, Author           
Rastelli, A.1, 2, Author           
Stangl, J., Author
Merdzhanova, T.2, Author           
Bauer, G., Author
Schmidt, O. G.1, 2, 3, 4, Author           
Affiliations:
1Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481              
2Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501              
3Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499              
4Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504              

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 Abstract: We observe that the morphology of strained SiGe/Si(001) islands oscillates between shallow and steeper shapes during extensive in situ annealing at the growth temperature. We attribute this result to a competition between coarsening and Si-Ge intermixing as paths to strain relaxation. A simple model, in which the equilibrium island shape depends on volume and the average misfit with the substrate, accounts for the observed behavior. Dislocated islands evolve similarly to coherent islands, with no introduction of additional dislocations throughout the annealing.

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Language(s): eng - English
 Dates: 2007
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 338565
ISI: 000245329600014
 Degree: -

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Title: Physical Review B
Source Genre: Journal
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Pages: - Volume / Issue: 75 (11) Sequence Number: 113307 Start / End Page: - Identifier: ISSN: 1098-0121