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  SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening

Zhang, J. J., Stoffel, M., Rastelli, A., Schmidt, O. G., Jovanovic, V., Nanver, L. K., et al. (2007). SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening. Applied Physics Letters, 91(17): 173115.

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 Creators:
Zhang, J. J.1, Author           
Stoffel, M.2, Author           
Rastelli, A.1, 2, Author           
Schmidt, O. G.1, 2, 3, 4, Author           
Jovanovic, V., Author
Nanver, L. K., Author
Bauer, G., Author
Affiliations:
1Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501              
2Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481              
3Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499              
4Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504              

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 Abstract: The morphological evolution of both pits and SiGe islands on patterned Si (001) substrates is investigated. With increasing Si buffer layer thickness the patterned holes transform into multifaceted pits before evolving into inverted truncated pyramids. SiGe island formation and evolution are studied by systematically varying the Ge coverage and pit spacing and quantitative data on the influence of the pattern periodicity on the SiGe island volume are presented. The presence of pits allows the fabrication of uniform island arrays with any of their equilibrium shapes. (C) 2007 American Institute of Physics.

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Language(s): eng - English
 Dates: 2007
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 338821
ISI: 000250468200094
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Title: Applied Physics Letters
Source Genre: Journal
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Pages: - Volume / Issue: 91 (17) Sequence Number: 173115 Start / End Page: - Identifier: ISSN: 0003-6951