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Abstract:
A method has been developed to form two quantum dot systems in lateral arrangement in a two-dimensional electron system of a GaAs-AlGaAs heterostructure with strong capacitive interdot coupling. In the authors' design, the interdot capacitance can reach more than one-third of the single-dot capacitance while tunneling between the dots is excluded. This has been achieved by a floating metallic electrode covering both quantum dots, a method already used in split-gate designs before. Here, however, they have reduced the capacitive coupling of this floating gate to other electrodes in the surroundings by an etching technique to obtain a large interdot coupling. (c) 2007 American Institute of Physics.
