Unveiling the morphology of buried In(Ga)As nanostructures by selective wet 
chemical etching: From quantum dots to quantum rings

Ding, F.; Wang, L. J.; Kiravittaya, S.; Müller, E.; Rastelli, A.; Schmidt, O. G.

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Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings

Ding, F., Wang, L. J., Kiravittaya, S., Müller, E., Rastelli, A., & Schmidt, O. G. (2007). Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings. Applied Physics Letters, 90(17): 173104.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-B5A4-C Version Permalink: https://hdl.handle.net/21.11116/0000-000E-B5A5-B

Genre: Journal Article

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Creators:
Ding, F., Author
Wang, L. J., Author
Kiravittaya, S.¹, Author
Müller, E., Author
Rastelli, A.^{1, 2}, Author
Schmidt, O. G.^{1, 2, 3, 4}, Author

Affiliations:
1Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501
2Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481
3Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499
4Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504

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Abstract: The three-dimensional morphology of In(Ga)As nanostructures embedded in a GaAs matrix is investigated by combining atomic force microscopy and removal of the GaAs cap layer by selective wet etching. This method is used to investigate how the morphology of In(Ga)As quantum dots changes upon GaAs capping and subsequent in situ etching with AsBr3. A wave function calculation based on the experimentally determined morphologies suggests that quantum dots transform into quantum rings during in situ etching. (c) 2007 American Institute of Physics.

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Language(s): eng - English

Dates: Date issued: 2007

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 338776
ISI: 000246568600095

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Title: Applied Physics Letters

Source Genre: Journal

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Pages: - Volume / Issue: 90 (17) Sequence Number: 173104 Start / End Page: - Identifier: ISSN: 0003-6951