ausblenden:
Schlagwörter:
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Zusammenfassung:
The ambipolar lateral diffusion of photo-induced charge carriers
restricted in a plane of a quantum well (QW) under a moderate
(non-quantizing) magnetic field is studied theoretically in the
framework of the drift-diffusion model. The continuity equation for
this case is solved exactly. The analytical expressions for the
concentration of photo-induced electrons and the built-in electric
field in the practically important cases of uniform and bell-shaped
light beams are obtained in a closed form. It is shown that the
ambipolar lateral diffusion of photo-induced charge carriers can be
suppressed in InGaAs/GaAs QWs by a moderate magnetic field of similar
to 0.5 mT.
