hide
Free keywords:
-
Abstract:
Ultra-thin Silicon-on-Insulator (SOI) transistor has proved to offer
advantages over bulk MOSFETs for high-speed, low power applications.
However, there is still a strong need to obtain an accurate
understanding of carrier transport and mobility behaviour in these
advanced devices. In this work, magnetoresistance technique is used to
perform mobility measurements in Fully-Depleted Silicon-on-Insulator
(FDSOI) MOSFETs. This technique has the advantage of allowing channel
mobility measurement from weak to strong inversion without requiring
the knowledge of the transistor's effective channel length. The
influence of different scattering mechanisms in the channel is
investigated in details by obtaining mobility values at low
temperatures. A new differential method enabling mobility extraction
from pure channel magnetoresistance corrected for source-drain series
resistance is presented. After the correction, in devices with large
series resistance an increase in the extracted mobility is obtained in
strong inversion, where the channel resistance is small and
conventional mobility extraction is most affected by the impact of
series resistance. (c) 2006 Elsevier Ltd. All rights reserved.
