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Abstract:
In this report we present our recent investigation on the co-existence
of superconducting and semiconducting properties in InN grown on
sapphire (0001) by the use of MBE and MOCVD methods. Magneto-transport
measurements were done using InN with a carrier density n. from 4 x
10(17) to 4 x 102 cm 3 in the temperature range from 20 mK to 2 K and
under the magnetic field (B) up to 23 T-c As a result, even InN samples
with n, as low as 4 x 10(17) cm(-3) showed superconductivity at T-c =
0.12 K. The vortex solid of InN was melted by thermal fluctuation and
by the external field, similarly to the observation in layered high T-c
superconductors. By the Shubnikov-de Haas oscillation measurements it
was found that there were substantial carriers spread in the a-b plane
which played an essential role not only for the occurrence of the
superconductivity, but also for many other unexpected electronic and
optical properties of InN. Based on these results we present a possible
mechanism of superconductivity in terms of the interaction between the
conduction electrons and the fixed d-electrons of In atoms spread in
the a-b plane. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
