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  Thermal and photochemical decomposition pathways of AsH3 on GaAs(100): Implication for atomic layer epitaxy

Zhu, X., Wolf, M., Huett, T., Nail, J., Banse, B. A., Creighton, J. R., et al. (1992). Thermal and photochemical decomposition pathways of AsH3 on GaAs(100): Implication for atomic layer epitaxy. Applied Physics Letters, 60(8), 977-979. doi:10.1063/1.106479.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-A86F-9 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-A870-6
Genre: Journal Article

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977_1_online.pdf (Publisher version), 873KB
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Copyright Date:
1992
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 Creators:
Zhu, X.‐Y.1, Author
Wolf, Martin2, Author                 
Huett, T.1, Author
Nail, J.1, Author
Banse, B. A., Author
Creighton, J. R., Author
White, J. M.1, Author
Affiliations:
1Department of Chemistry and Biochemistry, Center&r Materials Chemistry, University of Texas, Austin, Texas 78712, ou_persistent22              
2Physical Chemistry, Fritz Haber Institute, Max Planck Society, ou_634546              

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 Abstract: We report spectroscopic evidence for the thermal and photochemical decomposition pathways of arsine (AsH3) adsorbed on Ga‐rich GaAs(100). Arsine adsorbs molecularly on the Ga‐rich GaAs surface at 120 K and dissociates upon either heating to above 200 K or irradiation with 6.4 eV photons. The dissociation of arsine is accompanied by the formation of surface Ga‐H species, which is both thermally and photochemically more stable than surface AsHx. This implies that the removal of hydrogen from Ga is the rate‐limiting step in the initial stage of As deposition from AsH3 in the thermal or photoassisted atomic‐layer epitaxy of GaAs.

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Language(s): eng - English
 Dates: 1991-07-181991-12-091992-02-24
 Publication Status: Issued
 Pages: 3
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1063/1.106479
 Degree: -

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Title: Applied Physics Letters
  Abbreviation : Appl. Phys. Lett.
Source Genre: Journal
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Publ. Info: Melville, NY : American Institute of Physics
Pages: 3 Volume / Issue: 60 (8) Sequence Number: - Start / End Page: 977 - 979 Identifier: ISSN: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223