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  Laser‐induced interaction of ammonia with GaAs(100). I. Dissociation and nitridation

Zhu, X., Wolf, M., Huett, T., & White, J. M. (1992). Laser‐induced interaction of ammonia with GaAs(100). I. Dissociation and nitridation. The Journal of Chemical Physics, 97(8), 5856-5867. doi:10.1063/1.463745.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-A851-9 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-A852-8
Genre: Journal Article

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5856_1_online.pdf (Publisher version), 2MB
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https://hdl.handle.net/21.11116/0000-000E-A853-7
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Copyright Date:
1992
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 Creators:
Zhu, X.‐Y.1, Author
Wolf, Martin2, Author                 
Huett, T.1, Author
White, J. M.1, Author
Affiliations:
1Department of Chemistry and Biochemistry, Center for Materials Chemistry, University of Texas, Austin, Texas 78712, ou_persistent22              
2Physical Chemistry, Fritz Haber Institute, Max Planck Society, ou_634546              

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 Abstract: UV laser irradiation of ammonia adsorbed on GaAs(100) leads to molecular desorption and dissociation. A nitride passivation layer can be formed on the GaAs surface at 100 K by simultaneous exposure to ammonia and uv photons in a UHV environment. The nitride layer consists of a mixture of Ga and As nitrides. While the dominating GaN surface species is thermally stable, AsN desorbs below 800 K. Surface NH2 is identified as an intermediate. The implication of this study for selective area passivation and GaN growth is discussed.

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Language(s): eng - English
 Dates: 1992-05-131992-07-061992-08-15
 Publication Status: Issued
 Pages: 12
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1063/1.463745
 Degree: -

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Title: The Journal of Chemical Physics
  Abbreviation : J. Chem. Phys.
Source Genre: Journal
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Publ. Info: Woodbury, N.Y. : American Institute of Physics
Pages: 12 Volume / Issue: 97 (8) Sequence Number: - Start / End Page: 5856 - 5867 Identifier: ISSN: 0021-9606
CoNE: https://pure.mpg.de/cone/journals/resource/954922836226