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  Ultraviolet photochemical nitridation of GaAs

Zhu, X., Huett, T., Wolf, M., & White, J. M. (1992). Ultraviolet photochemical nitridation of GaAs. Applied Physics Letters, 61(26), 3157-3177. doi:10.1063/1.107950.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-44B9-5 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-44BC-2
Genre: Journal Article

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3175_1_online.pdf (Publisher version), 837KB
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1992
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 Creators:
Zhu, X.‐Y., Author
Huett, T., Author
Wolf, Martin1, Author                 
White, J. M., Author
Affiliations:
1Physical Chemistry, Fritz Haber Institute, Max Planck Society, ou_634546              

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 Abstract: Monolayer nitridation of Ga‐rich GaAs(100) is achieved at 100 K by simultaneous exposure to ammonia and 6.4 eV photons in a vacuum environment. This process is a result of nonthermal photodissociation of adsorbed ammonia. Surface NH2 is identified as an important intermediate in nitridation.

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Language(s): eng - English
 Dates: 1992-05-181992-09-241992-12-28
 Publication Status: Issued
 Pages: 3
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1063/1.107950
 Degree: -

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Title: Applied Physics Letters
  Abbreviation : Appl. Phys. Lett.
Source Genre: Journal
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Publ. Info: Melville, NY : American Institute of Physics
Pages: 3 Volume / Issue: 61 (26) Sequence Number: - Start / End Page: 3157 - 3177 Identifier: ISSN: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223