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  THz-induced carrier multiplication in TaAs Weyl semimetal

Houver, S., Soranzio, D., Biasco, S., Shekhar, C., Felser, C., Abreu, E., et al. (2023). THz-induced carrier multiplication in TaAs Weyl semimetal. In 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 17-22 Sept. 2023 (pp. 1-2). IEEE. doi:10.1109/IRMMW-THz57677.2023.10299110.

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 Creators:
Houver, Sarah1, Author
Soranzio, Davide1, Author
Biasco, Simone1, Author
Shekhar, Chandra2, Author           
Felser, Claudia3, Author           
Abreu, Elsa1, Author
Savoini, Matteo1, Author
Johnson, Steven Lee1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Chandra Shekhar, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863428              
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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Free keywords: Electronic properties, Samarium compounds, Tantalum compounds, Temperature distribution, Terahertz waves, Topology, Carrier multiplication, High-field, Linear dispersion, On demands, Property, Resonant condition, Tera Hertz, Terahertz light, Terahertz radiation, Vibrational state, Terahertz spectroscopy
 Abstract: Topological Dirac and Weyl semimetals (D&W SM) have attracted a lot of attention due to their unusual electronic properties, which are strongly dependent on the symmetry of the system. By altering the symmetry of the lattice, using for example a pulse of light, one can expect to modify their topological nature and induce/suppress the related properties 'on demand'. Highfield Terahertz (THz) radiation that interacts with vibrational states under near-resonant conditions is a promising pump candidate to induce structural changes in D&W SM compounds, possibly leading to topological transient or permanent changes. There are, however, some challenges to achieving such control. D&W SM have a specific band structure showing a 3D-linear dispersion around nodes, which makes them sensitive to THz-induced carrier multiplication. These carrier multiplication processes can compete with and ultimately screen the interaction of the THz light with vibrational modes. Here, we present recent results of 2D-THz spectroscopy of a bulk Weyl semimetal TaAs in reflection. We highlight THz-induced carrier multiplication effects and study the field and temperature dependence of the number of carriers induced by the THz field. We examine possible carrier multiplication mechanisms which could be involved. © 2023 IEEE.

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Language(s): eng - English
 Dates: 2023-11-232023-11-23
 Publication Status: Issued
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 Identifiers: DOI: 10.1109/IRMMW-THz57677.2023.10299110
ISBN: 21622027 (ISSN); 979-835033660-3 (ISBN)
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Title: 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 17-22 Sept. 2023
Source Genre: Proceedings
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Publ. Info: IEEE
Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 1 - 2 Identifier: -