Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) 
using low-energy electron diffraction and angle resolved ultraviolet 
photoelectron spectroscopy

Riedl, C.; Zakharov, A. A.; Starke, U.

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Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy

Riedl, C., Zakharov, A. A., & Starke, U. (2008). Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy. Applied Physics Letters, 93(3): 033106.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-AD4E-9 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-AD4F-8

Genre: Journal Article

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Creators:
Riedl, C.¹, Author
Zakharov, A. A., Author
Starke, U.¹, Author

Affiliations:
1Scientific Facility Interface Analysis (Ulrich Starke), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370498

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Language(s): eng - English

Dates: Date issued: 2008

Publication Status: Issued

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Identifiers: eDoc: 409573
ISI: 000257968700067

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Title: Applied Physics Letters

Source Genre: Journal

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Pages: - Volume / Issue: 93 (3) Sequence Number: 033106 Start / End Page: - Identifier: ISSN: 0003-6951